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Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
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- Authors
- Sung Min Yoon, Nam Yeal Lee, Sang Ouk Ryu, Young Sam Park, Seung Yun Lee, Kyu Jeong Choi, Byoung Gon Yu
- Issue Date
- 2005-07
- Citation
- Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the etching behaviors of GST, which has been mainly employed for the realization of phase-change type nonvolatile memory devices, using high-density helicon plasma etching system under the various etching gas conditions. Our results provide the etch rates of GST thin films as a function of gas mixing ratio when the gas mixtures of Ar/Cl2 and Ar/CHF 3 were applied. It was found that the etch selectivities of GST to SiO2 and to TiN were optimized at Ar/Cl2 = 90/10 and Ar/CHF3 = 80/20, respectively. It was also confirmed that there is no significant change in composition of GST after the etching process. Using the obtained results, we can design the etching process in a systematic way for the fabrication of GST-loaded phase-change type memory devices. ©2005 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, CHF 3, Etch rates, Etching characteristics, Etching process, GST thin films, Gas mixing, Gas mixture, High-density, Memory applications, Mixing ratio