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Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
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- Authors
- Yong Shin Kim, Seung-Chul Ha, Kyuwon Kim, Haesik Yang, Sung-Yool Choi, Youn Tae Kim, Joon T. Park, Chang Hoon Lee, Jiyoung Choi, Jungsun Paek, Kwangyeol Lee
- Issue Date
- 2005-07
- Citation
- Applied Physics Letters, v.86, no.21, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Project Code
- 05ZB1400, Bio Information/Communication Technology for u-Healthcare, Kim Youn Tae
- Abstract
- Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72. © 2005 American Institute of Physics.
- KSP Keywords
- 5 nm, Alcohol solution, Ammonia vapor, Anomalous conductivity, Bulk-micromachined, Drop-coating, Electrical conductivity(EC), Gas sensing, Metal oxide sensors, Metal-oxide(MOX), Mild temperature