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학술지 Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
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저자
김용신, 하승철, 김규원, 양해식, 최성율, 김윤태, Joon T. Park, 이창훈, 최지영, 백정선, 이광열
발행일
200507
출처
Applied Physics Letters, v.86 no.21, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.1929872
협약과제
05ZB1400, U-Healthcare용 바이오 정보통신 핵심기술 연구, 김윤태
초록
Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72. © 2005 American Institute of Physics.
KSP 제안 키워드
5 nm, Alcohol solution, Ammonia vapor, Anomalous conductivity, Bulk-micromachined, Drop-coating, Electrical conductivity(EC), Gas sensing, Metal oxide sensors, Metal-oxide(MOX), Mild temperature