상세정보
학술지
Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film
- 발행일
- 200507
- 출처
- Applied Physics Letters, v.86 no.21, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 05ZB1400, U-Healthcare용 바이오 정보통신 핵심기술 연구, 김윤태
- 초록
- Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (W O2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O2.72. © 2005 American Institute of Physics.
- KSP 제안 키워드
- 5 nm, Alcohol solution, Ammonia vapor, Anomalous conductivity, Bulk-micromachined, Drop-coating, Electrical conductivity(EC), Gas sensing, Metal oxide sensors, Metal-oxide(MOX), Mild temperature