ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Effect of Ferroelectric Switching Time on Fatigue Behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 Thin Films
Cited 10 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
윤성민, 이남열, 류상욱, 신웅철, 유인규, 유병곤
발행일
200507
출처
Thin Solid Films, v.484 no.1-2, pp.374-378
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2005.03.004
협약과제
03MB5200, 나노급 상변화 정보저장기술 개발, 유병곤
초록
The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi4Ti3O12 (BLTO) capacitors were investigated. The parameter of switching time (t s) for the fabricated BLTO capacitor was found to be dependent on the crystallographic orientations of prepared BLTO films and the capacitor size. It was clearly demonstrated that the BLTO capacitors experienced the fatigue degradation only when the switching pulse width was longer than ts. In particular, these behaviors were apparently observed in the full-switching regime where a sufficiently large field was applied to the ferroelectric capacitors. For the first time, the fatigue behaviors of BLTO films with two different crystallographic orientations of (117) and (00l) were intensively studied under various measuring conditions. © 2005 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Crystallographic orientation, Fatigue degradation, Ferroelectric capacitors, La-substituted, Large field, Sampling Time(Ts), Switching regime, Switching time, capacitor size, fatigue behaviors, ferroelectric fatigue