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Highly Reliable Flash Cell for Low Power Application
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- Authors
- Young Sam Park, Yong Seok Choi, Sung Taeg Kang, Jeong Uk Han, Seung Beom Yoon, Chil Hee Chung, Sung Min Yoon, Sang Ouk Ryu, Byoung Gon Yu
- Issue Date
- 2005-11
- Citation
- Japanese Journal of Applied Physics, v.44, no.11, pp.7816-7819
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- The electrical properties of a split-gate-type flash cell are investigated and optimized by junction engineering to obtain a high reliability. Phosphorus implantation is conducted to form a cell source junction, and the following three different anneal conditions change voltage coupling ratio between the source and the floating gate. As the ratio increases, it is observed that program characteristic is improved and endurance property is degraded, which matches well with simulation result. Therefore, cells in the pure N2 group are considered to be optimized cells. Optimized cells guarantee 10 5 cycle endurance, and show excellent program disturbance and bake retention properties. © 2005 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Coupling ratio(CR), Endurance property, Floating gate, High Reliability, Low power applications, Phosphorus implantation, Program disturbance, Retention properties, Split-gate, Voltage coupling