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학술지 Highly Reliable Flash Cell for Low Power Application
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저자
박영삼, 최용석, 강성택, 한정욱, 윤승범, 정칠희, 윤성민, 류상욱, 유병곤
발행일
200511
출처
Japanese Journal of Applied Physics, v.44 no.11, pp.7816-7819
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.44.7816
협약과제
06MB1200, 나노급 상변화 정보저장 기술, 유병곤
초록
The electrical properties of a split-gate-type flash cell are investigated and optimized by junction engineering to obtain a high reliability. Phosphorus implantation is conducted to form a cell source junction, and the following three different anneal conditions change voltage coupling ratio between the source and the floating gate. As the ratio increases, it is observed that program characteristic is improved and endurance property is degraded, which matches well with simulation result. Therefore, cells in the pure N2 group are considered to be optimized cells. Optimized cells guarantee 10 5 cycle endurance, and show excellent program disturbance and bake retention properties. © 2005 The Japan Society of Applied Physics.
KSP 제안 키워드
Applied physics, Coupling ratio(CR), Endurance property, Floating gate, High Reliability, Low power applications, Phosphorus implantation, Program disturbance, Retention properties, Split-gate, Voltage coupling