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Conference Paper
Capacitance Characteristics of Encapsulated Organic Semiconducting Devices
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- Authors
- Yong Suk Yang, Hye Yong Chu, JeongIk Lee, Gi Heon Kim, Seong Hyun Kim
- Issue Date
- 2005-08
- Citation
- SPIE Optics + Photonics 2005, pp.1-7
- Publisher
- SPIE
- Language
- English
- Type
- Conference Paper
- Abstract
- Organic semiconducting devices such as OTFT and OLED are now familiar in display fields as flat-panel displays that overcome the disadvantages of liquid-crystal-display such as poor viewing angle and insufficient brightness. In special, organic and inorganic glassy barrier fabrications on OLEDs are receiving very much attention in conquest of lifetime of OLEDs. In this study, we researched the surface and electric properties of inorganic and organic thin films deposited on ITO glasses, polyethersulfone (PES) substrates, and OLEDs by chemical vapor deposition (CVD) and thermal evaporation, respectively. The deposition parameters of the films were a ratio of oxygen and SiH4 gas, plasma power, working pressure, and substrate temperature, etc. The thickness of barrier films is in the range 0.1 Pm ~ 5 Pm. The thickness and surface morphology are observed by an atomic force microscopy (AFM). The composition and water vapor transmission (WVTR) of the films were measured by an x-ray photoelectron spectroscopy and a MOCON, respectively. The degradation mechanisms of packaged OLEDs was investigated by the visual lifetime-measurement system of OLEDs with parameters such as a pixel luminance, a RMS luminance, a brightness area ratio, and an edge degradation depth.
- KSP Keywords
- Area ratio, Atomic force microscope(AFM), Atomic force microscopy (afm), Barrier film, Capacitance characteristics, Chemical Vapor Deposition, Deposition parameters, Field effect transistors(Substrate temperature), Flat Panel, Organic thin film, Organic-inorganic