상세정보
학술지
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
- 저자
- 한성주, Su Chang Jeon, Bongyong Lee, Hongil Yoon, 권용환, 최중선, Ilgu Yun
- 발행일
- 200506
- 출처
- IEEE Transactions on Device and Materials Reliability, v.5 no.2, pp.262-267
- ISSN
- 1530-4388
- 출판사
- IEEE
- 협약과제
- 04MB2700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
- 초록
- The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications. © 2005 IEEE.
- KSP 제안 키워드
- Accelerated life test, Activation Energy, Breakdown voltage(BDV), Current Path, Dark Current, High temperature storage, InGaAs waveguide, Leakage current, Metalorganic chemical vapor deposition, Optical receiver, P-N junction