상세정보
학술지
Characteristics of waveguide photodetectors at high-power optical input
- 발행일
- 200504
- 출처
- IEEE Photonics Technology Letters, v.17 no.4, pp.881-883
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 04MB2700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
- 초록
- High-power characteristics of waveguide photodetectors (PDs) with various absorbing layer thicknesses were analyzed. When large photocurrent was generated by high-power optical input, the saturation of radio frequency response was closely related with the optical absorption efficiency. The device with a single quantum well absorbing layer showed no saturation behavior until the device failure, while PDs with a thicker absorbing layer were saturated at photocurrent of a few milliamperes. It was also found that as optical confinement decreases, the maximum photocurrent the device can endure increases by more than three times. © 2005 IEEE.
- KSP 제안 키워드
- Absorbing layer, Device failure, Frequency response(FreRes), High-power characteristics, Optical absorption efficiency, Quantum Well(QW), Radio Frequency(RF), optical confinement, single quantum well