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Characteristics of waveguide photodetectors at high-power optical input
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- Authors
- Joong-Seon Choe, Yong-Hwan Kwon, Kisoo Kim
- Issue Date
- 2005-04
- Citation
- IEEE Photonics Technology Letters, v.17, no.4, pp.881-883
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- High-power characteristics of waveguide photodetectors (PDs) with various absorbing layer thicknesses were analyzed. When large photocurrent was generated by high-power optical input, the saturation of radio frequency response was closely related with the optical absorption efficiency. The device with a single quantum well absorbing layer showed no saturation behavior until the device failure, while PDs with a thicker absorbing layer were saturated at photocurrent of a few milliamperes. It was also found that as optical confinement decreases, the maximum photocurrent the device can endure increases by more than three times. © 2005 IEEE.
- KSP Keywords
- Absorbing layer, Device failure, Frequency response(FreRes), High-power characteristics, Optical absorption efficiency, Quantum Well(QW), Radio Frequency(RF), optical confinement, single quantum well