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Conference Paper A 1.2V, 10MHz, low-pass Gm-C filter with Gm-cells based on triode-biased MOS and passive resistor in 0.13/spl mu/m CMOS technology
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Authors
Jun-Gi Jo, Changsik Yoo, Chunseok Jeong, Chan-Young Jeong, Mi-Young Lee, Jong-Kee Kwon
Issue Date
2005-09
Citation
Custom Integrated Circuits Conference (CICC) 2005, pp.195-198
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/CICC.2005.1568641
Project Code
05MB1100, Development of semiconductor circuit design based on the nano-scaled device, Kim Jongdae
Abstract
A 1.2V 10MHz low-pass Gm-C filter implemented with low-voltage Gm-cell based on passive resistor and triode-region MOSFET is described. The Gm-cell converts the input voltage to the output current by passive resistor for wider signal swing. For low-voltage operation, triode-region MOS transistors are widely used while the output resistance is improved by regulated gate cascode circuit. The 10MHz low-pass Gm-C filter was implemented in a 0.13μm CMOS technology and the measured input third order intercept point is 3dBV and 9.5dBV, respectively for in-band and out-of-band input. © 2005 IEEE.
KSP Keywords
CMOS Technology, Gm-C filter, Input voltage, Intercept point(IIP3), Low voltage operation, Passive resistor, cascode circuit, in-band, low pass, out-of-band, output current