상세정보
학술지
Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
- 발행일
- 200509
- 출처
- Electrochemical and Solid-State Letters, v.8 no.9, pp.F25-F28
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 04MB2400, Flexible 디스플레이 (차세대 디스플레이 기술 개발), 강광용
- 초록
- AlSixOy films with very good uniformity were deposited by plasma-enhanced atomic layer deposition (PEALD). Although the SiO2 PEALD failed at 150°C, Si atoms could be incorporated to form AlSixOy films when AlO and SiO subcycles were alternately performed. The catalytic effect of AlO films permits Si atoms to be incorporated into the films. Hence, it is possible to increase the Si content from 0 to 11.6 atom % by increasing SiO subcycles. The degradation of leakage current for AlSixOy films did not occurr compared to Al2O3 films. © 2005 The Electrochemical Society. All rights reserved.
- KSP 제안 키워드
- Aluminum silicate, Leakage current, Plasma-enhanced atomic layer deposition, Si content, catalytic effect