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Electronic Transport through Aromatic Thiol Monolayer Assembled in the Nano Via-Hole Electrode
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- Authors
- Chang Jin Lee, Yong Ku Kang, Kyung Ja Seo, Youn Mi Shin, Jae Ho Kim, Sung Wook Choi, Jin Hee Kim, Hei Mi Soh, Ho Young Lee, Do Hyun Kim, Chung Kun Song
- Issue Date
- 2005-01
- Citation
- Japanese Journal of Applied Physics, v.44, no.1B, pp.530-534
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Nano via-hole devices were fabricated by the e-beam patterning of holes on a SiNx insulating layer and used as electronic test platforms for the characterization of the electrical properties of molecules. Conditions of RIE were controlled to produce bowl-shaped nano size via-holes such that the diameter of the bottom opening was less than approximately 50 nm when the top diameter was 100nm. After forming a self-assembled monolayer on the bottom electrode inside the via-hole, a top metal electrode was deposited to produce an MIM type device. When dodecanethiol was used, the fabricated device showed a current density of 1.3 × 103 A/cm2 at 1.0 V, which was in the same order of magnitude as the previously reported value. When aromatic thiols were used, most devices showed diode-like behaviors with a higher current density than the dodecanethiol, and a few showed NDR-like characteristics. © 2005 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Bottom electrode, Bowl-shaped, Electrical properties, Electronic test, Electronic transport, Insulating layer, Nano-size, Self-assembled monolayers(SAMS), Thiol monolayer, Via-hole