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Conference Paper
Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz MMIC down-conversion mixer
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- Authors
- Sang-Heung Lee, Ja-Yol Lee, Sang-Hoon Kim, Hyun-Cheol Bae, Seung-Yun Lee, Bo Woo Kim, Jin-Yeong Kang
- Issue Date
- 2005-10
- Citation
- Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) 2005, pp.232-235
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, a 5.8 GHz MMIC down-conversion mixers are designed and fabricated on chip using SiGe BiCMOS process technology. To fabricate a SiGe HBT, we use a RPCVD system to grow a base epitaxial layer, and have adopted LOCOS isolation to separate the device and device terminals. This mixer is integrated on chip with RF/LO matching circuits, RF/LO input balun circuits, and IF output balun circuit. The measured results of the fabricated mixer show conversion gain of 5.5 dB, LO to RF isolation of 44 dB, and LO to IF isolation of 40 dB, IIP3 of 1.8 dBm. The chip size of the fabricated mixer is 1.9 mm /spl times/ 1.2 mm.
- KSP Keywords
- 2 mm, 5.8 GHz, Conversion gain, Down-conversion mixer, Epitaxial layer, RF isolation, SiGe BiCMOS process, SiGe BiCMOS technology, SiGe HBT, SiGe device, matching circuit