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Conference Paper Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
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Authors
Dongwoo Suh, Lin Chen, Wei Lu
Issue Date
2015-12
Citation
International Conference on Sensing Technology (ICST) 2015, pp.199-202
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ICSensT.2015.7438389
Abstract
Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.
KSP Keywords
Core/shell nanowires, Forward and reverse, Ge/Si core/shell, Mid-infrared(MIR), Reverse bias, Schottky photodiode, Single nanowire, VLS process, electrical characteristics, electrical properties(I-V curve), photoelectric characteristics