상세정보
학술대회
Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
- 저자
- 서동우, 전린, 루웨이
- 발행일
- 201512
- 출처
- International Conference on Sensing Technology (ICST) 2015, pp.199-202
- 초록
- Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.
- KSP 제안 키워드
- Core/shell nanowires, Forward and reverse, Ge/Si core/shell, Mid-infrared(MIR), Reverse bias, Schottky photodiode, Single nanowire, VLS process, electrical characteristics, electrical properties(I-V curve), photoelectric characteristics