상세정보
학술지
Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
- 발행일
- 200511
- 출처
- Electrochemical and Solid-State Letters, v.8 no.11, pp.F47-F50
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 04MB2400, Flexible 디스플레이 (차세대 디스플레이 기술 개발), 강광용
- 초록
- The effect of O2 plasma on the deposition of ZrO2 films was investigated using plasma-enhanced atomic layer deposition. Plasma pulse width and oxidant gas composition were varied to examine the effect on film characteristics. Characteristics such as impurity content, dielectric constant, and electric field-current density curve were strongly dependent on the plasma pulse width. The relative dielectric constants of films deposited at 150°C were greatly increased from 11.2 to 31.3 with increasing plasma pulse width from 0.2 to 1.5 s. The addition of N2 gas to the O2 plasma had only a slight effect on film characteristics. © 2005 The Electrochemical Society. All rights reserved.
- KSP 제안 키워드
- As impurity, Dielectric Constant, Impurity content, Oxide film, Plasma-enhanced atomic layer deposition, Zirconium oxide, current density, electric field, film characteristics, gas composition, pulse width