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10 Gbit s-1 electroabsorption modulator integrated with a DBR laser using the selective area growth technique
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- Authors
- Jae-Sik Sim, Sung-Bock Kim, Sang-Wan Ryu, Yong-Soon Baek
- Issue Date
- 2005-10
- Citation
- Semiconductor Science and Technology, v.20, no.10, pp.L47-L49
- ISSN
- 0268-1242
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report 10 Gbit s-1 operation of an electroabsorption modulator (EAM) integrated with a distributed Bragg reflector (DBR) laser. The selective area growth technique was first employed in the 10 Gbit s-1 EAM fabrications to grow an active layer in the regions of the laser and the modulator. High side mode suppression ratios (SMSRs) over 45 dB and a 3 dB bandwidth of 12 GHz were observed. A clearly opened eye-diagram was also observed with 10 Gbit s-1 non-return to zero (NRZ) modulation signals. © 2005 IOP Publishing Ltd.
- KSP Keywords
- 3-dB bandwidth, Active Layer, Distributed Bragg reflector (DBR) laser, Eye Diagram, First Stokes(S1), High side, Mode suppression, Selective area growth, electroabsorption modulator(EAM), nonreturn-to-zero(NRZ), return-to-zero(RZ)