상세정보
학술지
10 Gbit s-1 electroabsorption modulator integrated with a DBR laser using the selective area growth technique
- 발행일
- 200510
- 출처
- Semiconductor Science and Technology, v.20 no.10, pp.L47-L49
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 05MB3600, 광엑세스용 광집적 모듈, 오광룡
- 초록
- We report 10 Gbit s-1 operation of an electroabsorption modulator (EAM) integrated with a distributed Bragg reflector (DBR) laser. The selective area growth technique was first employed in the 10 Gbit s-1 EAM fabrications to grow an active layer in the regions of the laser and the modulator. High side mode suppression ratios (SMSRs) over 45 dB and a 3 dB bandwidth of 12 GHz were observed. A clearly opened eye-diagram was also observed with 10 Gbit s-1 non-return to zero (NRZ) modulation signals. © 2005 IOP Publishing Ltd.
- KSP 제안 키워드
- 3-dB bandwidth, Active Layer, Distributed Bragg reflector (DBR) laser, Eye Diagram, First Stokes(S1), High side, Mode suppression, Selective area growth, electroabsorption modulator(EAM), nonreturn-to-zero(NRZ), return-to-zero(RZ)