상세정보
학술지
All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- 발행일
- 200601
- 출처
- Japanese Journal of Applied Physics, v.45 no.1, pp.L8-L10
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 05MB3600, 광엑세스용 광집적 모듈, 오광룡
- 초록
- We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 μm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8째, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30km. © 2006 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Divergence angle, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, Slope efficiency, continuous wave(CW), power penalty, side mode suppression ratio(SMSR), vertical-cavity surface-emitting laser(VCSEL)