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학술지 All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
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저자
박미란, 권오균, 한원석, 이기황, 박성주, 유병수
발행일
200601
출처
Japanese Journal of Applied Physics, v.45 no.1, pp.L8-L10
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.45.L8
협약과제
05MB3600, 광엑세스용 광집적 모듈, 오광룡
초록
We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 μm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8째, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30km. © 2006 The Japan Society of Applied Physics.
키워드
InAlGaAs, InP, Metal organic chemical vapor deposition (MOCVD), Modulation, Monolithic, long wavelength, Vertical cavity surface emitting laser (VCSEL)
KSP 제안 키워드
Applied physics, Divergence angle, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, Slope efficiency, continuous wave(CW), long wavelength, power penalty, side mode suppression ratio(SMSR)