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Journal Article All-Monolithic 1.55μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
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Authors
Mi Ran Park, O Kyun Kwon, Won Seok Han, Ki Hwang Lee, Seong Joo Park, Byueng Su Yoo
Issue Date
2006-01
Citation
Japanese Journal of Applied Physics, v.45, no.1, pp.L8-L10
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1143/JJAP.45.L8
Project Code
05MB3600, Photonic device integrated module for optical access network, Oh Kwang Ryong
Abstract
We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 μm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8째, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30km. © 2006 The Japan Society of Applied Physics.
KSP Keywords
Applied physics, Divergence angle, Metalorganic chemical vapor deposition, Modulation bandwidth, Output power, Single-mode output, Slope efficiency, continuous wave(CW), power penalty, side mode suppression ratio(SMSR), vertical-cavity surface-emitting laser(VCSEL)