BROWSE
Detail
Journal Article
Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate
Cited 19 time in 
Share 
Share
- Authors
- Yong-Hae Kim, Choong-Heui Chung, Sun Jin Yun, Jaehyun Moon, Dong-Jin Park, Dae-Won Kim, Jung Wook Lim, Yoon-Ho Song, Jin Ho Lee
- Issue Date
- 2005-12
- Citation
- Thin Solid Films, v.493, no.1-2, pp.192-196
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation. © 2005 Elsevier B.V. All rights reserved.
- KSP Keywords
- A-Si, High-intensity laser, Laser irradiation, Plastic substrate, Polycrystalline silicon(poly-Si), Polycrystalline silicon film, Sequential lateral solidification, Si film, Working gas, amorphous silicon, large grain