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A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness
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- Authors
- Y. W. Kim, S. E. Hong, E. S. Nam, H. D. Cheong
- Issue Date
- 2005-12
- Citation
- Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, a reliable method was applied to make devices with a simple InP-based heterojunction bipolar transistors(HBT) construction process. Satisfactory maximum oscillation frequency (fmax) and cut-off frequency (fT) were obtained in a simple layer structure. The thickness of HBT collector layer was 3500 횇(sample A) and 5000횇 (sample B). The emitter size of HBT was measured to be 1.2×6,μm 2. In sample A, fT and fmax were obtained to be 143 GHz and 176 GHz, respectively. In case of sample B, fT and fmax were to be 126 GHz and 127 GHz, respectively. HBT with the thinner collector layer thickness shows better frequency characteristics. The collector current density in sample A is acquired to be 200kA/cm2 at the peak frequency. © 2005 IEEE.
- KSP Keywords
- 6 GHz, Construction process, Frequency characteristics, Heterojunction Bipolar Transistors(HBTs), InP-based, Layer structure, Peak frequency, RF characteristics, Single heterojunction, comparative study, current density