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Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
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- Authors
- Byung Gyu Chae, Hyun Tak Kim, Sun Jin Yun, Bong Jun Kim, Yong Wook Lee, Doo Hyeb Youn, Kwang Yong Kang
- Issue Date
- 2005-11
- Citation
- Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- Highly oriented VO2 thin films were grown on sapphire substrates by a sol-gel method which includes a low-pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a relatively wide range of pressures below 100 mTorr and temperatures above 400°C. X-ray diffraction analysis showed that as-deposited films crystallize directly to the VO2 phase without passing through intermediate phases. VO2 films have been found to be with [100]- and [010]-preferred orientations on Al2O 3(1012) and Al2O3(1010) substrates, respectively. Both films undergo a metal-insulator transition with an abrupt change in resistance, with different transition behaviors observed for the differently oriented films. For the [010]-oriented VO2 films a larger change in resistance of 1.2×104 and a lower transition temperature are found compared to the values obtained for the [100]-oriented films. © 2005 The Electrochemical Society. All rights reserved.
- KSP Keywords
- Abrupt change, As-deposited, Change in resistance, Highly oriented, O 3, Oriented films, Oxygen atmosphere, Sapphire substrates, Sol-Gel Deposition, Wide range, X-ray diffraction analysis