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학술지 Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
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저자
채병규, 김현탁, 윤선진, 김봉준, 이용욱, 윤두협, 강광용
발행일
200511
출처
Electrochemical and Solid-State Letters, v.9 no.1, pp.C12-C14
ISSN
1099-0062
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.2135430
초록
Highly oriented VO2 thin films were grown on sapphire substrates by a sol-gel method which includes a low-pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a relatively wide range of pressures below 100 mTorr and temperatures above 400°C. X-ray diffraction analysis showed that as-deposited films crystallize directly to the VO2 phase without passing through intermediate phases. VO2 films have been found to be with [100]- and [010]-preferred orientations on Al2O 3(1012) and Al2O3(1010) substrates, respectively. Both films undergo a metal-insulator transition with an abrupt change in resistance, with different transition behaviors observed for the differently oriented films. For the [010]-oriented VO2 films a larger change in resistance of 1.2×104 and a lower transition temperature are found compared to the values obtained for the [100]-oriented films. © 2005 The Electrochemical Society. All rights reserved.
KSP 제안 키워드
Abrupt change, As-deposited, Change in resistance, Highly oriented, O 3, Oriented films, Oxygen atmosphere, Sapphire substrates, Sol-Gel Deposition, Wide range, X-ray diffraction analysis