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Conference Paper Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil
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Authors
Dong Jin Park, Yong Hae Kim, Dae Won Kim, Choong Heui Chung, Jae Hyun Moon, Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
Issue Date
2005-12
Citation
International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4
Language
English
Type
Conference Paper
Project Code
05MB3300, Flexible Display, Kang Kwang-Yong
Abstract
We fabricated low temperature polycrystalline silicon TFT on metal foil substrate below 200℃. For preventing gate dielectric leakage current and enhancing electric field between gate and source, crystallizing and activation were processed before deposit gate dielectric. The n-channel TFTs with W/L=7/20 on metal foil exhibited the field-effect mobility of 176cm2/Vs, the on/off current ratio of 106, the threshold voltage of 7V, and the subthreshold slope of 0.8V/dec.
KSP Keywords
High performance, Leakage current, Low temperature(LT), Low temperature poly-Si, Low-temperature polycrystalline Silicon(LTPS), N-channel, ON/OFF current ratio, Polycrystalline silicon(poly-Si), Subthreshold slope(SS), electric field, field-effect mobility