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Conference Paper
Dependence of DC, and RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
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- Authors
- Y. W. Kim, E. S. Nam, S. E. Hong, B. W. Kim, H. D. Jung
- Issue Date
- 2005-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2006, pp.1-7
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Heterojunction Bipolar Transistors(HBTs), RF characteristics, Single heterojunction, layer thickness