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학술대회
ZnO TFT Fabricated at Low Temperature for Application of Active-matrix Display
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- 발행일
- 200512
- 출처
- International Display Workshops (IDW) 2005, pp.1-3
- 협약과제
- 05MB3300, Flexible 디스플레이 (차세대 디스플레이 기술 개발), 강광용
- 초록
- ZnO TFT was studied for the application of flexible display. We use ALD method for the active layer at low temperature (under 150°C). Adoption of ZnO:AI as source/drain layer, which is also grown using ALD method, gave low contact resistance and good device behavior as well as transparency. The manufactured TFT gave field effect mobility 0.95 cm2/V.s, and flat band voltage 1.7V.
- KSP 제안 키워드
- ALD method, Active Layer, Contact resistance(73.40.Cg), Flat-band voltage, Low contact resistance, Low temperature(LT), field-effect mobility, flexible display, matrix display