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Conference Paper
ZnO TFT Fabricated at Low Temperature for Application of Active-matrix Display
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- Authors
- Chi Sun Hwang, Sang Hee Ko Park, Hye Yong Chu
- Issue Date
- 2005-12
- Citation
- International Display Workshops (IDW) 2005, pp.1-3
- Language
- English
- Type
- Conference Paper
- Abstract
- ZnO TFT was studied for the application of flexible display. We use ALD method for the active layer at low temperature (under 150°C). Adoption of ZnO:AI as source/drain layer, which is also grown using ALD method, gave low contact resistance and good device behavior as well as transparency. The manufactured TFT gave field effect mobility 0.95 cm2/V.s, and flat band voltage 1.7V.
- KSP Keywords
- ALD method, Active Layer, Contact resistance(73.40.Cg), Flat-band voltage, Low contact resistance, field-effect mobility, flexible display, low temperature, matrix display