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Dependence of the Carrier Lifetime on the Level Spacing in Semiconductor Quantum Dots
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- 저자
- 장유동, 이한현, 이동한, 홍성의, 오대곤
- 발행일
- 200508
- 출처
- Journal of the Korean Physical Society, v.47 no.2, pp.328-330
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 05MB3800, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- We have found that the carrier lifetime in a quantum dot is shorter when the level spacing between the ground and the first excited states is larger. We interpret this observation with the improved wavefunction overlap between an electron and a hole at a large level spacing.The existence of an optimum point for zero dimensionality is found for tall quantum dots.
- KSP 제안 키워드
- Excited states, Quantum Dot(QD), carrier lifetime, semiconductor quantum dots