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Conference Paper
Research and Development on Next-Generation Nonvolatile Memory in ETRI
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- Issue Date
- 2005-12
- Citation
- Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
- Language
- Other
- Type
- Conference Paper
- Abstract
- The PRAM is one of the most promising candidates for the next-generation unified-memory due to its excellent logic compatibility, scaling-favorable operation scheme, and low fabrication cost. This paper presents lower-power and higher speed operations of PCM device using novel phase change materials. We have investigated the electric properties of Sb-excess Ge2Sb2+xTe5 materials. It was found that the Tc and Tm values of GeSbTe(15/47/38) are about 40℃ higher and 70℃ lower than those of Ge2Sb2Te5 (GST), respectively. The RESET current (IRESET) of GeSbTe(15/47/38) device decreased from 14mA to 10.6mA, when compared to the GST device. The reduction of IRESET may be due to the lower Tm of GeSbTe(15/47/38) and will contribute to the lower power operation of PCM. We also proposed a novel two-element phase change material of Sb65Se35 (SS) for the PRAM applications. It was confirmed that the phase-change memory device using SS materials showed significant improvement of device performance for example, shorter tSET and smaller IRESET , compared to the device using GST materials.
- KSP Keywords
- GST materials, Lower power, Next-generation, Non-Volatile Memory(NVM), Operation scheme, Phase Change Material(PCM), device performance, electric properties, memory device, power operation, research and development