ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 DC and RF Characteristics of 0.15 μm Power Metamorphic HEMTs
Cited 4 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
심재엽, 윤형섭, 강동민, 홍주연, 이경호
발행일
200512
출처
ETRI Journal, v.27 no.6, pp.685-690
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.05.0105.0062
협약과제
04MB2700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
초록
DC and RF characteristics of 0.15 μm GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The 0.15 μm × 100 μm MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The 8 × 50 μm MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.
키워드
0.15 關m, Metamorphic HEMT, T-gate
KSP 제안 키워드
6 GHz, 77 GHz, Drain saturation current, GHz band, Gate resistance, High electron mobility transistor(HEMT), InGaAs channel, Indium content, Maximum Frequency, Minimum noise figure, Noise Figure(NF)