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Journal Article
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
- Authors
- Jae Yeob Shim, Hyung Sup Yoon, Dong Min Kang, Ju Yeon Hong, Kyung Ho Lee
- Issue Date
- 2005-12
- Citation
- ETRI Journal, v.27, no.6, pp.685-690
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- DC and RF characteristics of 0.15 μm GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The 0.15 μm × 100 μm MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The 8 × 50 μm MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.
- KSP Keywords
- 6 GHz, 77 GHz, Drain saturation current, GHz band, Gate resistance, High electron mobility transistor(HEMT), InGaAs channel, Indium content, Maximum Frequency, Minimum noise figure, Noise Figure(NF)