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Conference Paper
2-Dimnensional InGaAs/InP Photodiode Arrays on semi-insulating InP for LASER RADAR and Dark Current Characteristics
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- Authors
- E. S. Nam, S. E. Hong, M. S. Oh, Y. W. Kim, H. S. Kim, H. D. Jung
- Issue Date
- 2005-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2005, pp.78-78
- Language
- English
- Type
- Conference Paper
- Abstract
- Two dimensional InGaAs/InP pin photodiode array on semi-insulating InP has been developed for the image sensing of the eye safe LASER RADAR in the 1.55 μm wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generation-recombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP. The static dark current of the InGaAs/InP PiN photodiode arrays increases as proportional to the number of the pixels in the array. © 2005 IEEE.
- KSP Keywords
- Current characteristics, Dark Current, Image sensing, Laser Radar, PIN photodiodes, Photodiode array, Semi-Insulating, high-bandwidth, large area, two-dimensional(2D), wavelength range