상세정보
학술대회
2-Dimnensional JnGaAsJnPPhotodiodeAnays Onsemi-InsuainginPforLASER RADAR and DaikCumntctscs
- 발행일
- 200512
- 출처
- Asia-Pacific Microwave Conference (APMC) 2005, pp.1-3
- 협약과제
- 05DB1100, 3차원 거리/영상 신호처리 집적화 회로를 내장한 InGaAs 광검출 수신기, 김호영
- 초록
- Two dimensional InGaAs/InP pin photodiode array on semi-insulating InP has been developed for the image sensing of the eye safe LASER RADAR in the 1.55 μm wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generation-recombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP. The static dark current of the InGaAs/InP PiN photodiode arrays increases as proportional to the number of the pixels in the array. © 2005 IEEE.
- KSP 제안 키워드
- Current characteristics, Dark Current, Image sensing, Laser Radar, PIN photodiodes, Photodiode array, Semi-Insulating, high-bandwidth, large area, two-dimensional(2D), wavelength range