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학술지 Abrupt Metal-Insulator Transition Observedin VO2 thin Films Induced by a Switching Voltage Pulse
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저자
채병규, 김현탁, 윤두협, 강광용
발행일
200512
출처
Physica B : Condensed Matter, v.369 no.1-4, pp.76-80
ISSN
0921-4526
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physb.2005.07.032
초록
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device material to transform efficiently from an insulator to a metal. The characteristics of the transformation were analyzed by considering both the delay time and rise time of the measured current response. The extrapolated switching time of the MIT decreased down to 9 ns as the external load resistance decreased to zero. Observation of the intrinsic switching time of the MIT in the correlated oxide films is impossible because of the inhomogeneity of the metallic and the insulating states. This indicates that the intrinsic switching time is in the order of less than a nanosecond. © 2005 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Delay Time, External load, Oxide film, Switching time, Voltage pulse, current response, load resistance, metal-insulator transition, rise time, switching pulse, switching voltage