상세정보
학술지
Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film
- 발행일
- 200512
- 출처
- Japanese Journal of Applied Physics, v.44 no.42, pp.L1301-L1303
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 초록
- We have measured the DC resistance R(T) and AC dielectric constant 琯(??) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of 琯(??). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of 琯(??) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ?뎟2 in the metallic low-R state is estimated to be 1.2 × 109/cm3. © 2005 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, DC Resistance, Debye relaxation, Dielectric Constant, Dielectric response, Memory states, NiO thin films, Resistive memory, plasma frequency, temperature dependence, thermally activated