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Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film
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- Authors
- Min Gyu Kim, Sun Man Kim, Eun Jip Choi, Seung Eon Moon, Jong Hyurk Park, Hyoung Chan Kim, Bae Ho Park, Myoung Jae Lee, Sun Ae Seo, David H. Seo, Seung Eun Ahn, In Kyeong Yoo
- Issue Date
- 2005-12
- Citation
- Japanese Journal of Applied Physics, v.44, no.42, pp.L1301-L1303
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We have measured the DC resistance R(T) and AC dielectric constant 琯(??) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of 琯(??). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of 琯(??) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ?뎟2 in the metallic low-R state is estimated to be 1.2 × 109/cm3. © 2005 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, DC Resistance, Debye relaxation, Dielectric Constant, Dielectric response, Memory states, NiO thin films, Resistive memory, plasma frequency, temperature dependence, thermally activated