Journal Article
The Effects of Electrodes Patterned onto the Piezoelectric Thin Film on Frequency Response Characteristics of PMN-PT MEMS Acoustic Actuators
The piezoelectric acoustic actuators were fabricated with PMN-PT single crystal membranes patterned by circular inter-digitated electrodes (IDEs) using silicon-based microelectromechanical systems (MEMS) technology. In order to investigate the effect of the electrodes patterned onto the PMN-PT membrane on the performance of the fabricated piezoelectric MEMS acoustic actuators, we simulated and analyzed the vibrational frequency response characteristics of the PMN-PT acoustic actuators with three different electrode diameters of 4, 6 and 8혻mm. The PMN-PT piezoelectric acoustic actuators had a dimension of 11.7 × 11.7혻mm2, and the 10혻μm-thick and 8.5혻mm-diameter PMN-PT membranes were formed by the backside etching process using both KOH silicon wet etching and Deep RIE equipment. From the simulated and measured results, it was shown that the vibrational displacement of the PMN-PT MEMS acoustic actuator can be improved with increasing area of the IDE patterned on the piezoelectric membrane. Moreover, the output sound pressure levels (SPLs) of the fabricated PMN-PT MEMS acoustic actuators were also improved with increasing areas of electrodes patterned on the piezoelectric membranes. Particularly, in a low-frequency range of less than 1혻kHz, the PMN-PT piezoelectric MEMS acoustic actuator with an electrode diameter of 8혻mm generated about 15혻dB higher sound pressures compared to the piezoelectric acoustic actuator with an electrode diameter of 4혻mm. These results reveal that not only the displacement characteristics but also the output sound performance of the PMN-PT MEMS acoustic actuator can be improved with increasing area of IDE patterned on the d33 mode piezoelectric membrane.
KSP Keywords
Acoustic actuator, Deep RIE, Displacement characteristics, Etching process, Frequency response characteristics, Micro-electro-mechanical system(MEMS), PMN-PT single crystal, Piezoelectric membrane, Piezoelectric thin film, Pressure level, Silicon wet etching
Copyright Policy
ETRI KSP Copyright Policy
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.