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Dielectric Properties of Paraelectric Ba(Zr, Ti)O3 Thin Films forTunable Microwave Applications
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- Issue Date
- 2005-04
- Citation
- Integrated Ferroelectrics, v.77, no.1, pp.93-99
- ISSN
- 1058-4587
- Publisher
- Taylor & Francis
- Language
- English
- Type
- Journal Article
- Abstract
- Paraelectric Ba(Zr,Ti)O3 [BZT] thin films were prepared on MgO substrates by pulsed laser ablation and their dielectric characteristics and tunabiltiy were investigated as a function of the Zr content. Dielectric properties of BZT thin films were measured under dc bias using planar interdigitated capacitor. The excellent tunable dielectric characteristics were achieved for x = 0.25 at room temperature; tunability ~74.5%, tan灌 ~0.0535 at 100 kHz, indicating that it is a promising canditate for voltage tunable dielectric working at room temperature.
- KSP Keywords
- BZT thin films, Dielectric characteristics, Dielectric properties, Interdigitated capacitor, Room-temperature, Tunable dielectric, Zr content, dc bias, microwave applications, pulsed laser ablation(PLA), thin film(TF)