상세정보
학술지
Optical Characteristics of In(Ga)As Quantum Dots on (100) InP Substrate for 1.5 μm Laser Diodes
- 발행일
- 200503
- 출처
- Microelectronics Journal, v.36 no.3-6, pp.190-193
- ISSN
- 0026-2692
- 출판사
- Elsevier
- 협약과제
- 05MB3800, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 μm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good isolation of quantum dots. Continuous-wave lasings are observed at room temperature from laser diodes made of these quantum dots. © 2005 Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- As 2, Full-width at half-maximum(FWHM), InP substrate, Laser diode(LD), Optical characteristics, Quantum Dot(QD), Room-temperature, carrier lifetime, continuous wave(CW), good isolation, uniform size distribution