BROWSE
Detail
Journal Article
Optical Characteristics of In(Ga)As Quantum Dots on (100) InP Substrate for 1.5 μm Laser Diodes
Cited 0 time in 
Share 
Share
- Authors
- J.S. Yim, J.H. Lee, Y.D. Jang, M.D. Kim, D. Lee, H.D. Kim, S.H. Pyun, W.G. Jeong, J.S. Kim, S.U. Hong, D.K. Oh
- Issue Date
- 2005-03
- Citation
- Microelectronics Journal, v.36, no.3-6, pp.190-193
- ISSN
- 0026-2692
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 μm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good isolation of quantum dots. Continuous-wave lasings are observed at room temperature from laser diodes made of these quantum dots. © 2005 Elsevier Ltd. All rights reserved.
- KSP Keywords
- As 2, Full-width at half-maximum(FWHM), InP substrate, Laser diode(LD), Optical characteristics, Quantum Dot(QD), Room-temperature, carrier lifetime, continuous wave(CW), good isolation, uniform size distribution