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Conference Paper
Si Ridges in Laser Processing for TFT Fabrications: Formation and Planarization
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- Authors
- Jae Hyun Moon, Yong Hae Kim, Choong Heui Chung, Jin Ho Lee
- Issue Date
- 2005-11
- Citation
- MRS Meeting 2005 (Fall), pp.1-3
- Language
- English
- Type
- Conference Paper
- Abstract
- In this study, the characteristics of Si ridges formed after laser crystallization of a-Si films have been studied means of atomic force and secondary electron microcopies. We report on the ridge height dependency on parameters such as laser energy density and initial a-Si film thickness. To lessen ridge height, we have exercised single shot post-laser treatments at various laser energy densities. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved TFT characteristics.
- KSP Keywords
- Atomic force, Laser energy density, Laser processing, Laser treatments, Ridge height, Secondary electron, Si film thickness, Single-shot, a-Si films, laser crystallization