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Conference Paper Si Ridges in Laser Processing for TFT Fabrications: Formation and Planarization
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Authors
Jae Hyun Moon, Yong Hae Kim, Choong Heui Chung, Jin Ho Lee
Issue Date
2005-11
Citation
MRS Meeting 2005 (Fall), pp.1-3
Language
English
Type
Conference Paper
Abstract
In this study, the characteristics of Si ridges formed after laser crystallization of a-Si films have been studied means of atomic force and secondary electron microcopies. We report on the ridge height dependency on parameters such as laser energy density and initial a-Si film thickness. To lessen ridge height, we have exercised single shot post-laser treatments at various laser energy densities. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved TFT characteristics.