상세정보
학술지
Low Temperature Fabrication of Indium-Tin Oxide Film by Using Ionized Physical Vapor Deposition Method
- 발행일
- 201503
- 출처
- Surface and Coatings Technology, v.266, pp.10-13
- ISSN
- 0257-8972
- 출판사
- Elsevier
- 협약과제
- 14PB1400, 윈도우 일체형 30인치급 터치센서 개발, 정우석
- 초록
- Indium-tin oxide (ITO) films were successfully grown at low temperatures by ionized physical vapor deposition (IPVD) method, equipped with an internal-type inductively coupled plasma reactor (ICP-reactor). Radio-frequency antenna for ICP was made by Cu tube for the flow of cooling water, which was shielded by a quartz tube for excluding Cu-contamination from re-sputtering near the plasma field. Due to the high plasma density of IPVD, in-situ crystallization during the deposition of ITO film occurred even at the low temperatures, which lowers the sheet resistance. Therefore, IPVD could be used as an effective tool for low temperature processing devices such as plastic cover-unified touch sensors.
- KSP 제안 키워드
- Cooling water, Cu-contamination, ITO film, In-situ crystallization, Inductively coupled plasma reactor, Inductively-coupled plasma(ICP), Ionized physical vapor deposition(IPVD), Low temperature(LT), Low temperature fabrication, Low temperature processing, Plasma density