상세정보
학술지
Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
- 발행일
- 200601
- 출처
- Electrochemical and Solid-State Letters, v.9 no.1, pp.F8-F11
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 초록
- The electrical properties of aluminum silicate (AlSixO y) films grown at 120 and 150°C by plasma-enhanced atomic layer deposition were investigated for the application on flexible devices. AlSi xOy films with dielectric constants of 5.6 and 6.8 exhibited a reduced hysteresis voltage in capacitance-voltage curves compared to Al2O3 films, indicating an improved interfacial quality. The leakage current density for AlSixOy is comparable to that for Al2O3. Moreover, the results indicate that the insertion of SiO layers suppresses the film crystallization and the formation of an interfacial layer. © 2005 The Electrochemical Society. All rights reserved.
- KSP 제안 키워드
- Aluminum silicate, Capacitance-voltage, Dielectric Constant, Interfacial quality, Plasma-enhanced atomic layer deposition, electrical properties(I-V curve), flexible device, hysteresis voltage, interfacial layer, leakage current density