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학술지 Nanoscale thin-film Morphologies and Field-Effect Transistor Behavior of Oligothiophene Derivatives
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저자
임은희, 정병준, 심홍구, Tomohiro Taguchi, Bunpei Noda, Takuya Kambayashi, Takehiko Mori, Ken Ishikawa, Hideo Takezoe, 도이미
발행일
200606
출처
Organic Electronics, v.7 no.3, pp.121-131
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2005.12.001
협약과제
05IB1100, OTFT 소자 신뢰성 향상 기술 개발, 도이미
초록
The field-effect transistor (FET) performances of two thiophene-based semiconducting materials (T2TT and T2FL) were examined. Through studies of the thin-film morphology using X-ray diffraction (XRD) and atomic force microscopy (AFM), we could access the behavior and structure of the thin-film devices at the nanoscale level in single molecular layers and determine the correlation between molecular alignment and device performance. Due to the extended ?-conjugation, efficient hole injection, and good molecular alignment, the T2TT and T2FL FET devices exhibited hole mobilities of up to 0.03 cm2 V-1 s-1, when the films were deposited at Tsub = RT and 80 °C, respectively. In spite of the large number of small grains in the film deposited at room temperature, the T2TT molecules were aligned perpendicular to the substrate when deposited at this low substrate temperature, which favored ?-? overlap between adjacent molecules, resulting in high OFET performance. © 2005 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Atomic force microscope(AFM), Atomic force microscopy (afm), FET devices, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), First Stokes(S1), Low substrate temperature, Molecular alignment, Oligothiophene derivatives, Room-temperature, Small grains