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Field Emission from Ni-Disilicide Nanorods Formed by using Implantation of Ni in Si Coupled with Laser Annealing
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- Authors
- Young Woo Ok, Tae Yeon Seong, Chel-Jong Choi, K. N. Tu
- Issue Date
- 2006-01
- Citation
- Applied Physics Letters, v.88, no.4, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the formation of Ni-disilicide (Ni Si2) nanorods using Ni and Si implantation combined with a laser annealing process. We found that Ni Si2 nanorods are formed when the as-implanted Si samples are laser annealed at the energy density of 700 mJ cm2. Based on the Fowler-Nordheim theory, field emission behavior of the Ni Si2 nanorod samples has been characterized. The turn-on field and a field enhancement factor were measured to be 7.6 Vμm and about 630, respectively. A possible mechanism is given to describe how the Ni Si2 nanorods embedded in crystallized Si are formed during the laser annealing. © 2006 American Institute of Physics.
- KSP Keywords
- Coupled with, Emission behavior, Energy Density, Field Emission, Field Enhancement Factor, Fowler-Nordheim theory, Laser annealing process, Possible mechanism, Si implantation, Turn-on field