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Conference Paper Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT

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Authors: Ho Kyun Ahn, Jong Won Lim, Hong Gu Ji, Woo Jin Chang, Jae Kyoung Mun, Hae Cheon Kim

Issue Date: 2006-02

Citation: 한국 반도체 학술 대회 (KCS) 2006, pp.1-2

Language: English

Type: Conference Paper

Project Code: 05MB1400, SoP(System on Package) for 60 GHz Pico cell Communication, Cho Kyoung Ik

KSP Keywords: Device characteristics, Gate shape, T-Gate

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