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Conference Paper
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
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- Issue Date
- 2006-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents the effect of the 1 st -deck head size on the DC and RF characteristics of double deck T-gate 0.12um AlGaAs/InGaAs p-HEMT devices and the optimum 1 st -deck head size. The 1 st -deck head size varied from 0.20um to 0.39um and the 2 nd -deck head size was fixed at 1.0um. At 0.22um of the optimum 1 st -deck head size, the cut-off frequency and the maximum frequency of oscillation were 95GHz and 189GHz, respectively. At 0.39um of the over 1 st -deck head size, the RF performance was degraded due to the significant increase of C gs . At the 1 st -deck head sizes less than 0.2um, the device shows a bad pinch-off characteristics.
- KSP Keywords
- Device characteristics, Gate shape, Head size, Maximum Frequency, Pinch-off, RF characteristics, RF performance, T-Gate, cutoff frequency, pseudomorphic high electron mobility transistor(pHEMT)