상세정보
학술지
High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics
- 발행일
- 201512
- 출처
- ETRI Journal, v.37 no.6, pp.1135-1142
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- Multilayered ZnO-SnO2 heterostructure thin films consisting of ZnO and SnO2 layers are produced by alternating the pulsed laser ablation of ZnO and SnO2 targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and SnO2 layers. The performance parameters of amorphous multilayered ZnO-SnO2 heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO2 layers. A highest electron mobility of 43 cm2/V횂?쥀, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of 1010 are obtained for the amorphous multilayered ZnO(1.5 nm)- SnO2(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnOSnO2 heterostructure film consisting of ZnO, SnO2, and ZnO-SnO2 interface layers.
- KSP 제안 키워드
- 5 nm, Drain current, Electronic structures, Electronic transport properties, High performance, I-V characteristic(Transport property), Microelectronic devices, Next-generation, Performance parameters, Thin-Film Transistor(TFT), electron mobility