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Conference Paper
Fabrication of Low Noise Amplifier using 0.15 um Power Metamorphic HEMT and It’s Noise Characteristics
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- Authors
- J. Y. Shim, D. M. Kang, H. S. Yoon, J. Y. Hong, K. H. Lee
- Issue Date
- 2006-02
- Citation
- 한국반도체 학술 대회 (KCS) 2006, pp.1-2
- Publisher
- 대한전기학회
- Language
- English
- Type
- Conference Paper
- Abstract
- Using 0.15 mm power MHEMTs, the LNA was fabricated and it's noise performance was investigated. The 0.15 mm power MHEMT devices show a maximum gm of 828 mS/mm, and a Vth of -0.65 V. The fmax and fT of oscillation are 141 GHz and 243 GHz, respectively. A very low Fmin of 0.79 dB and an Gas of 10.56 dB are obtained at 26GHz. This low noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head. This power MHEMT technology can be used to 77 GHz band applications.
- KSP Keywords
- 77 GHz, GHz band, Gate resistance, Noise characteristics, Noise performance, T-shaped gate, low noise amplifier(LNA)