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Conference Paper Fabrication of Low Noise Amplifier using 0.15 um Power Metamorphic HEMT and It’s Noise Characteristics
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Authors
J. Y. Shim, D. M. Kang, H. S. Yoon, J. Y. Hong, K. H. Lee
Issue Date
2006-02
Citation
한국반도체 학술 대회 (KCS) 2006, pp.1-2
Publisher
대한전기학회
Language
English
Type
Conference Paper
Abstract
Using 0.15 mm power MHEMTs, the LNA was fabricated and it's noise performance was investigated. The 0.15 mm power MHEMT devices show a maximum gm of 828 mS/mm, and a Vth of -0.65 V. The fmax and fT of oscillation are 141 GHz and 243 GHz, respectively. A very low Fmin of 0.79 dB and an Gas of 10.56 dB are obtained at 26GHz. This low noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head. This power MHEMT technology can be used to 77 GHz band applications.
KSP Keywords
77 GHz, GHz band, Gate resistance, Noise characteristics, Noise performance, T-shaped gate, low noise amplifier(LNA)