We present on oscillations in the photoreflectance (PR) spectra of modulation-doped AlGaAs/GaAs single heterojunctions (SHs) grown on semi-insulating (SI) GaAs substrates. The oscillatory feature occurs in the energy range around the bandgap of GaAs. Undoped bulk GaAs samples grown on SI-GaAs substrates do not show such oscillations, indicating that the oscillations are related to the two dimensional electron gas (2DEG) at the AlGaAs/GaAs interface. The oscillations in the PR spectra of the modulation-doped AlGaAs/GaAs SHs are attributed to the interference effect of two light beams, one reflected from the 2DEG channel and the other reflected from the GaAs/SI-GaAs interface.
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