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Conference Paper
Buffer Structure for Protecting Laser Damage of Plastic Substrate in Ultra Low Temperature Polycrystalline Silicon thin Film Transistor Process
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- Authors
- Yong Hae Kim, Choong Heui Chung, Sun Jin Yun, Myung Hee Lee, Dong Jin Park, Dae Won Kim, Jung Wook Lim, Yoon Ho Song, Jae Hyun Moon, Jin Ho Lee
- Issue Date
- 2006-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2006, pp.1-3
- Language
- English
- Type
- Conference Paper
- Abstract
- We present a novel oxide-silicon-oxide buffer structure to prevent the laser damage of a plastic substrate in ultra low temperature (<120℃) polycrystalline silicon thin film transistor (ULTPS TFT) process. Specifically, We inserted an amorphous silicon film as an absorption layer into a buffer oxide films. The maximum endurable laser energy was increased from 200 mJ/cm2 to 800 mJ/cm 2. The fabricated ULTPS nMOS TFT showed performance with mobility of 30 cm2/Vs.
- KSP Keywords
- Absorption layer, Amorphous silicon film, Laser damage, Low-temperature polycrystalline silicon(LTPS), Oxide film, Plastic substrate, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin film, Silicon oxide, Thin-Film Transistor(TFT), Ultra Low