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Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric
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- Authors
- Choong Heui Chung, Yong Hae Kim, Jae Hyun Moon, Jung Wook Lim, Sun Jin Yun, Dong Jin Park, Jin Ho Lee
- Issue Date
- 2006-03
- Citation
- Applied Physics Letters, v.88, no.7, pp.1-15
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Plasma-free defect passivation is achieved on polycrystalline silicon thin-film transistors fabricated below 150 °C by annealing and extracting H from Si Nx: H interlayer dielectric. By annealing at 250 °C without a plasma application, VT and μFE were improved from 11.5 V to 3.5 V and from 86 cm2 V s to 212 cm2 V s, respectively. Improvement in performance is attributed to defect passivation by H diffusing out from Si Nx: H. Dangling bonds and strained bonds can be acceptably passivated around 170 °C, and 205 °C, respectively. The activation energy for the diffusion of H into polycrystalline silicon was estimated to be 0.87 eV. © 2006 American Institute of Physics.
- KSP Keywords
- Activation Energy, Dangling bonds, Defect passivation, Interlayer dielectric, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin-film transistor, Thin-Film Transistor(TFT), plasma application, thin film(TF)