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Three-Dimensional Selective Oxidation Fin Channel MOSFET and Its Electrical Characteristics
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- Authors
- Young Kyun Cho, Tae Moon Roh, Jong Dae Kim
- Issue Date
- 2006-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- A fin channel with a fin dimension as small as 20 nm and gradually increased source drain expansion regions are fabricated on a bulk silicon wafer by using a three-dimensional selective oxidation. Process steps to implement the proposed device are explained briefly. We are demonstrating their preliminary characteristics and properties compared with those of the conventional FinFET and the body-tied FinFET device via three-dimensional device simulation. Compared to control devices, the three-dimensional selective oxidation fin channel MOSFET (SoxFET) shows a larger drive current, higher linear transconductance and nearly the same scaling-down characteristics.
- KSP Keywords
- 20 nm, As 2, Body-tied FinFET, Control device, Device Simulation, Drive Current, Selective oxidation, Silicon wafer, Three dimensional(3D), bulk silicon, electrical characteristics