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Conference Paper
Fabrication of 4-channel Monolithic Integrated with DBR Laser - Electroabsorption Modulator
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- Authors
- Jae Sik Sim, Sung Bock Kim, Yong Hwan Kwon, Yong Soon Baek, Sang Wan Ryu
- Issue Date
- 2006-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- A distributed Bragg reflector (DBR) laser and a high speed Electroabsorption (EA) modulator are integrated on the basis of the selective area growth (SAG) technique. The typical threshold current is 4 mA, and the side mode suppression ratio (SMSR) is over 35 dB with the single mode operation at 1550 nm. The active exhibits 2.4 mW fiber output power at a laser gain current of 60 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13GHz. 10Gbit/s non-return to zero (NRZ) operation with 12 dB extinction ratio is obtained. A four channel laser array with 100 GHz wavelength spacing was fabricated and its operation at designed wavelength was confirmed.
- KSP Keywords
- 1550 nm, 3-dB bandwidth, Distributed Bragg reflector (DBR) laser, High Speed, Laser array, Monolithic integrated, Output power, Selective area growth, Single-mode operation, Threshold current, bias voltage