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Ultrafast Laser Ablation of Indium Tin Oxide Thin Films for Organic Light-Emitting Diode Application
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- Authors
- Mi Ra Park, Byong Hyok Chon, Hyun Sun Kim, Sae Chae Jeoung, Dong Ho Kim, Jeoung Ik Lee, Hye Yong Chu, Hyeong Rae Kim
- Issue Date
- 2006-02
- Citation
- Optics and Lasers in Engineering, v.44, no.2, pp.138-146
- ISSN
- 0143-8166
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation. © 2005 Elsevier Ltd. All rights reserved.
- KSP Keywords
- Electrical Resistance, Glass substrate, ITO electrode, ITO film, ITO thin film, Indium tin oxide thin films, Laser fluence, Laser pulse, Organic light-emitting diodes(OLEDS), Processing conditions, Selective ablation