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Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
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- Authors
- Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jeon, Chel Jong Choi, Byoung Chul Park, Seong Jae Lee
- Issue Date
- 2006-02
- Citation
- Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Project Code
- 05MF1400, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
- Abstract
- Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with a 5nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current less than 10nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity. © 2006 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Barrier Metal, Carrier injection, Drain current, Field-effect transistors(FETs), Injection characteristics, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), N-type, Negative gate voltage, ON/OFF current ratio