상세정보
학술지
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
- 발행일
- 200602
- 출처
- Japanese Journal of Applied Physics, v.45 no.2A, pp.730-732
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 05MF1400, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with a 5nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current less than 10nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity. © 2006 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Barrier Metal, Carrier injection, Drain current, Field-effect transistors(FETs), Injection characteristics, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), N-type, Negative gate voltage, ON/OFF current ratio