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Journal Article Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
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Authors
Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jeon, Chel Jong Choi, Byoung Chul Park, Seong Jae Lee
Issue Date
2006-02
Citation
Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1143/JJAP.45.730
Project Code
05MF1400, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
Abstract
Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with a 5nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current less than 10nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity. © 2006 The Japan Society of Applied Physics.
KSP Keywords
Applied physics, Barrier Metal, Carrier injection, Drain current, Field-effect transistors(FETs), Injection characteristics, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), N-type, Negative gate voltage, ON/OFF current ratio