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Conference Paper
Effects of Ag/ITO Current Spreading Contact to a SiC Doping Layer on Performance of Si Quantum Dot Light-Emitting Diodes
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- Authors
- Chul Huh, Nae Man Park, Tae Youb Kim, Kyung Hyun Kim, Jae Heon Shin, Kwan Sik Cho, Gun Yong Sung
- Issue Date
- 2006-02
- Citation
- 한국반도체 학술 대회 (KCS) 2006, pp.1-2
- Publisher
- 대한전기학회
- Language
- English
- Type
- Conference Paper
- Abstract
- We investigated the effects of a very thin Ag interlayer between the ITO current spreading layer and a SiC doping layer on silicon nanocrystals embedded in silicon nitride film on the electrical and optical performance of the LEDs. The forward voltage at a current of 20 mA of the LED with an interlayer was decreased by 2.5 V compared to that of the LED without an interlayer due to the decrease in the contact resistance. In addition, the light output power of the LED with an interlayer was also enhanced.
- KSP Keywords
- Contact resistance(73.40.Cg), Current spreading layer(CSL), Forward voltage, Light output power, Optical performance, Quantum dot(Qdot), Si quantum dot, Silicon nanocrystals(Si NCs), Silicon nitride film, light emitting diodes(LED), quantum-dot light-emitting diodes(QLEDs)