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Journal Article
Effects of Ag/Indium Tin Oxide Contact to a SiC Doping Layer on Performance of Si Nanocrystal Light-Emitting Diodes
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- Authors
- Chul Huh, Nae Man Park, Jae Heon Shin, Kyung Hyun Kim, Tae Youb Kim, Kwan Sik Cho, Gun Yong Sung
- Issue Date
- 2006-03
- Citation
- Applied Physics Letters, v.88, no.13, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the effects of a very thin Ag (2.5 nm) interlayer between the indium tin oxide (ITO) current spreading layer and a SiC doping layer on silicon nanocrystals (nc-Si) embedded in silicon nitride film on the electrical and optical performance of the light-emitting diodes (LEDs). The forward voltage at a current of 20 mA of the nc-Si LED with a Ag interlayer was decreased by 2.5 V compared to that of the nc-Si LED without one due to the decrease in the contact resistance. In addition, the light output power of the nc-Si LED with a Ag interlayer was also enhanced by 40%. This result strongly indicates that the Ag/ITO contact scheme can serve as a highly promising contact scheme to a SiC film for the realization of the nc-Si LEDs with a high efficiency. © 2006 American Institute of Physics.
- KSP Keywords
- 5 nm, Contact resistance(73.40.Cg), Current spreading layer(CSL), Forward voltage, ITO contact, Light output power(Lop), Light-emitting diodes (leds), Nc-Si, Si LED, Si nanocrystal, SiC film