ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Effects of Ag/Indium Tin Oxide Contact to a SiC Doping Layer on Performance of Si Nanocrystal Light-Emitting Diodes
Cited 16 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
허철, 박래만, 신재헌, 김경현, 김태엽, 조관식, 성건용
발행일
200603
출처
Applied Physics Letters, v.88 no.13, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2191409
초록
We report on the effects of a very thin Ag (2.5 nm) interlayer between the indium tin oxide (ITO) current spreading layer and a SiC doping layer on silicon nanocrystals (nc-Si) embedded in silicon nitride film on the electrical and optical performance of the light-emitting diodes (LEDs). The forward voltage at a current of 20 mA of the nc-Si LED with a Ag interlayer was decreased by 2.5 V compared to that of the nc-Si LED without one due to the decrease in the contact resistance. In addition, the light output power of the nc-Si LED with a Ag interlayer was also enhanced by 40%. This result strongly indicates that the Ag/ITO contact scheme can serve as a highly promising contact scheme to a SiC film for the realization of the nc-Si LEDs with a high efficiency. © 2006 American Institute of Physics.
KSP 제안 키워드
5 nm, Contact resistance(73.40.Cg), Current spreading layer(CSL), Forward voltage, ITO contact, Light output power(Lop), Light-emitting diodes (leds), Nc-Si, Si LED, Si nanocrystal, SiC film