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Journal Article Quantum Simulation of Resonant Tunneling in Nanoscale Tunnel Transistors
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Authors
Min Cheol Shin, Moon Gyu Jang, Seong Jae Lee
Issue Date
2006-03
Citation
Journal of Applied Physics, v.99, no.6, pp.1-3
ISSN
0021-8979
Publisher
American Institute of Physics(AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2183348
Abstract
We have performed ballistic and diffusive quantum simulations of resonant tunneling in nanoscale tunnel transistors. We have investigated three factors, temperature, interference, and diffusive scattering, which may affect the resonant tunneling effect in the devices. Our simulations indicate that if the channel length and depth are in the order of tens of nanometers and a few nanometers, respectively, and the electron mean free path in the channel region is in the order of tens of nanometers, the current oscillations and the negative differential resistance behavior due to resonant tunneling may be observed at room temperature. © 2006 American Institute of Physics.
KSP Keywords
Channel Length, Current oscillations, Diffusive scattering, Electron mean free path, Negative differential resistance(NDR), Negative differential resistance behavior, Resonant tunneling effect, Room-temperature, Tunnel transistors, mean free path(MFP), quantum simulation