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Conference Paper Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
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Authors
J. W. Lim, H. K. Ahn, H. G. Ji, W. J. Chang, J. K. Mun, H. Kim
Issue Date
2006-02
Citation
한국반도체 학술 대회 (KCS) 2006, pp.1-2
Publisher
대한전기학회
Language
English
Type
Conference Paper
Abstract
We report the fabrication and dc, microwave characteristics of 0.12 µm single and double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic HEMTs (PHEMTs) using a SiN x pre-passivation layer. A 300 Å and 200 Å SiN x layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260℃ to protect the device and to define the gate footprint. The single and double-recessed processes were carried out by dry etching techniques. Completed double-recessed T-gate PHEMT devices exhibited a peak transconductance, g m , of 756 mS/mm, a current-gain-cutoff frequency (f T) as high as 124 GHz and a maximum oscillation frequency (f max) of 247 GHz. We fabricated a 4-stage low noise amplifier (LNA) comprising a two-finger 0.12 μm × 100 μm PHEMT in each stage. The chip size is 3.7 mm × 1.6 mm and the thickness is 100 μm.
KSP Keywords
2.4 GHz, 7 mm, AlGaAs/InGaAs/GaAs pHEMTs, F T, F max, Pre-passivation, SiN x, T-Gate, cutoff frequency, dry etching, maximum oscillation frequency