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Conference Paper
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
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- Issue Date
- 2006-02
- Citation
- 한국반도체 학술 대회 (KCS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Project Code
- 05MB1400, SoP(System on Package) for 60 GHz Pico cell Communication, Cho Kyoung Ik
- KSP Keywords
- AlGaAs/InGaAs/GaAs pHEMTs, Pre-passivation, passivation layer, recessed gate