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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
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- Issue Date
- 2006-04
- Citation
- Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report the fabrication and DC and microwave characteristics of 0.12 μm double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) using dielectric-assisted process. Silicon nitride layers 300 and 200 횇 thick were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260°C to protect the device and to define the gate footprint. The double-recess process was carried out by two different etching techniques to obtain double-recessed T-gates with 0.12 μm gate lengths. Completed double-recessed T-gate AlGaAs/InGaAs/GaAs pHEMT devices fabricated using dry etching exhibited a peak transconductance, gm, of 765 mS/mm, a current-gain cutoff frequency (fT) as high as 124 GHz, and a maximum oscillation frequency (fmax) of 247 GHz. The fabricated low-noise amplifier (LNA) has a measured gain of more than 20 dB in the 62.75 to 64.75 GHz frequency range. © 2006 The Japan Society of Applied Physics.
- KSP Keywords
- 2.4 GHz, 5 GHz, Applied physics, Frequency Range, GaAs pHemt, High electron mobility transistor(HEMT), Nitride layer, Silicon Nitride, T-Gate, comparative study, cutoff frequency